IRF6662TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

506μm

Power Dissipation-Max :

2.8W Ta 89W Tc

Avalanche Energy Rating (Eas) :

39 mJ

Fall Time (Typ) :

5.9 ns

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

JESD-30 Code :

R-XBCC-N3

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Case Connection :

DRAIN

Terminal Position :

BOTTOM

Vgs(th) (Max) @ Id :

4.9V @ 100μA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pulsed Drain Current-Max (IDM) :

66A

Transistor Element Material :

SILICON

Rise Time :

7.5ns

Lead Free :

Lead Free

Number of Terminations :

3

Transistor Application :

SWITCHING

Turn-Off Delay Time :

24 ns

Input Capacitance (Ciss) (Max) @ Vds :

1360pF @ 25V

Power Dissipation :

89W

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

6.6A

Published :

2006

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Package / Case :

DirectFET™ Isometric MZ

Turn On Delay Time :

11 ns

Voltage - Rated DC :

100V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta 47A Tc

Current Rating :

8.3A

Mount :

Surface Mount

FET Type :

N-Channel

Resistance :

31mOhm

Rds On (Max) @ Id, Vgs :

22m Ω @ 8.2A, 10V

JESD-609 Code :

e1

Width :

5.05mm

Operating Temperature :

-40°C~150°C TJ

Number of Pins :

7

Number of Elements :

1

Length :

6.35mm

Drain to Source Breakdown Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®