IRF6662TR1PBF

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Mfr.Part #
IRF6662TR1PBF
Manufacturer
Infineon Technologies
Package / Case
DirectFET™ Isometric MZ
Datasheet
Download
Description
MOSFET N-CH 100V 8.3A DIRECTFET
Stock
21,693
In Stock :
21,693

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
DirectFET™ Isometric MZ
Current Rating :
8.3A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Width :
5.05mm
Drain to Source Resistance :
17.5mOhm
Published :
2006
Input Capacitance (Ciss) (Max) @ Vds :
1360pF @ 25V
Min Operating Temperature :
-40°C
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
6.6A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
HEXFET®
Operating Temperature :
-40°C~150°C TJ
RoHS Status :
RoHS Compliant
Resistance :
22mOhm
Number of Elements :
1
REACH SVHC :
No SVHC
Input Capacitance :
1.36nF
Drain to Source Voltage (Vdss) :
100V
Rds On Max :
22 mΩ
Power Dissipation-Max :
2.8W Ta 89W Tc
Mounting Type :
Surface Mount
Supplier Device Package :
DIRECTFET™ MZ
Height :
508μm
Length :
5.45mm
Threshold Voltage :
3.9V
Fall Time (Typ) :
5.9 ns
Packaging :
Tape and Reel (TR)
FET Type :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Turn On Delay Time :
11 ns
Element Configuration :
Single
Rise Time :
7.5ns
Dual Supply Voltage :
100V
Mount :
Surface Mount
Number of Pins :
5
Drain to Source Breakdown Voltage :
100V
Lead Free :
Lead Free
Turn-Off Delay Time :
24 ns
Current - Continuous Drain (Id) @ 25°C :
8.3A Ta 47A Tc
Gate Charge (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs(th) (Max) @ Id :
4.9V @ 100μA
Rds On (Max) @ Id, Vgs :
22mOhm @ 8.2A, 10V
Recovery Time :
51 ns
Termination :
SMD/SMT
Max Operating Temperature :
150°C
Power Dissipation :
89W
Voltage - Rated DC :
100V
Nominal Vgs :
3.9 V
Radiation Hardening :
No
Datasheets
IRF6662TR1PBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6662TR1PBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:DirectFET™ Isometric MZ, Operating Temperature:-40°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:5, IRF6662TR1PBF pinout, IRF6662TR1PBF datasheet PDF, IRF6662TR1PBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6662TR1PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF6662TR1PBF


N-Channel Tape & Reel (TR) 22mOhm @ 8.2A, 10V ±20V 1360pF @ 25V 31nC @ 10V 100V DirectFET™ Isometric MZ

IRF6662TR1PBF Overview


A device's maximum input capacitance is 1360pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 6.6A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 24 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 17.5mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 3.9V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRF6662TR1PBF Features


a continuous drain current (ID) of 6.6A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 24 ns
single MOSFETs transistor is 17.5mOhm
a threshold voltage of 3.9V
a 100V drain to source voltage (Vdss)


IRF6662TR1PBF Applications


There are a lot of Infineon Technologies
IRF6662TR1PBF applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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