IRF6655TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e1

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Published :

2006

Rise Time :

2.8ns

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4.8V @ 25μA

Terminal Position :

BOTTOM

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

62m Ω @ 5A, 10V

Drain to Source Breakdown Voltage :

100V

Lead Free :

Lead Free

Factory Lead Time :

13 Weeks

Avalanche Energy Rating (Eas) :

11 mJ

Pulsed Drain Current-Max (IDM) :

34A

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Length :

4.826mm

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta 19A Tc

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Height :

508μm

Series :

HEXFET®

Width :

3.9624mm

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Radiation Hardening :

No

Turn-Off Delay Time :

14 ns

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Vgs (Max) :

±20V

Package / Case :

DirectFET™ Isometric SH

Power Dissipation-Max :

2.2W Ta 42W Tc

JESD-30 Code :

R-XBCC-N2

Operating Temperature :

-40°C~150°C TJ

Turn On Delay Time :

7.4 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

11.7nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Drain-source On Resistance-Max :

0.062Ohm

Case Connection :

DRAIN

Power Dissipation :

42W

Voltage - Rated DC :

100V

Number of Pins :

5

Fall Time (Typ) :

4.3 ns

Current Rating :

4.2A

Continuous Drain Current (ID) :

4.2mA