IRF6655TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

5

Max Operating Temperature :

150°C

Drain to Source Voltage (Vdss) :

100V

Operating Temperature :

-40°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta 19A Tc

Vgs(th) (Max) @ Id :

4.8V @ 25μA

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

62mOhm @ 5A, 10V

Resistance :

62mOhm

Gate Charge (Qg) (Max) @ Vgs :

11.7nC @ 10V

Continuous Drain Current (ID) :

4.2A

Turn-Off Delay Time :

14 ns

Turn On Delay Time :

7.4 ns

Package / Case :

DirectFET™ Isometric SH

Drain to Source Breakdown Voltage :

100V

Fall Time (Typ) :

4.3 ns

Published :

2005

Power Dissipation-Max :

2.2W Ta 42W Tc

Series :

HEXFET®

Radiation Hardening :

No

Supplier Device Package :

DIRECTFET™ SH

Number of Elements :

1

Vgs (Max) :

±20V

Min Operating Temperature :

-40°C

REACH SVHC :

No SVHC

Power Dissipation :

42W

RoHS Status :

RoHS Compliant

Width :

3.95mm

Rise Time :

2.8ns

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Drain to Source Resistance :

53mOhm

Height :

506μm

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Threshold Voltage :

4V

Length :

4.826mm

Nominal Vgs :

4 V

Input Capacitance :

530pF

Packaging :

Tape and Reel (TR)

Rds On Max :

62 mΩ