IRF6655TR1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

19A

Max Operating Temperature :

150°C

RoHS Status :

Non-RoHS Compliant

Nominal Vgs :

4.8 V

Mount :

Surface Mount

Min Operating Temperature :

-40°C

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

11.7nC @ 10V

Operating Temperature :

-40°C~150°C TJ

Drain to Source Breakdown Voltage :

100V

Package / Case :

DirectFET™ Isometric SH

Power Dissipation :

4.2W

Rise Time :

2.8ns

Turn-Off Delay Time :

14 ns

Power Dissipation-Max :

2.2W Ta 42W Tc

Rds On (Max) @ Id, Vgs :

62mOhm @ 5A, 10V

Threshold Voltage :

4.8V

Vgs(th) (Max) @ Id :

4.8V @ 25μA

FET Type :

N-Channel

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Published :

2005

Rds On Max :

62 mΩ

Reverse Recovery Time :

31 ns

Supplier Device Package :

DIRECTFET™ SH

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta 19A Tc

Packaging :

Tape and Reel (TR)

Width :

3.95mm

Number of Pins :

6

Dual Supply Voltage :

100V

Drain to Source Resistance :

53mOhm

Drain to Source Voltage (Vdss) :

100V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Resistance :

62mOhm

Input Capacitance :

530pF