IRF6648TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

7mOhm

Published :

2006

Element Configuration :

Single

Width :

5.05mm

Drain to Source Voltage (Vdss) :

60V

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

13 ns

Operating Temperature :

-40°C~150°C TJ

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Max Operating Temperature :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

89W

Gate to Source Voltage (Vgs) :

20V

Input Capacitance :

2.12nF

Package / Case :

DirectFET™ Isometric MN

Turn-Off Delay Time :

28 ns

Voltage - Rated DC :

60V

Recovery Time :

47 ns

Min Operating Temperature :

-40°C

Rise Time :

29ns

Current - Continuous Drain (Id) @ 25°C :

86A Tc

Rds On (Max) @ Id, Vgs :

7mOhm @ 17A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2120pF @ 25V

Resistance :

7mOhm

Drain to Source Breakdown Voltage :

60V

Power Dissipation-Max :

2.8W Ta 89W Tc

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

16 ns

Height :

506μm

Number of Pins :

5

Rds On Max :

7 mΩ

Supplier Device Package :

DIRECTFET™ MN

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Vgs(th) (Max) @ Id :

4.9V @ 150μA

Length :

6.35mm

Continuous Drain Current (ID) :

69A

Mount :

Surface Mount

Mounting Type :

Surface Mount

Series :

HEXFET®

Current Rating :

86A

Radiation Hardening :

No

FET Type :

N-Channel