IRF6648TR1
- Mfr.Part #
- IRF6648TR1
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 86A DIRECTFET MN
- Stock
- 4,453
- In Stock :
- 4,453
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 7mOhm @ 17A, 10V
- Mount :
- Surface Mount
- RoHS Status :
- Non-RoHS Compliant
- Min Operating Temperature :
- -40°C
- Published :
- 2006
- Drain to Source Breakdown Voltage :
- 60V
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 2.8W Ta 89W Tc
- Vgs(th) (Max) @ Id :
- 4.9V @ 150μA
- REACH SVHC :
- No SVHC
- Threshold Voltage :
- 4V
- Turn On Delay Time :
- 16 ns
- Dual Supply Voltage :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2120pF @ 25V
- Reverse Recovery Time :
- 31 ns
- Series :
- HEXFET®
- Number of Pins :
- 7
- Operating Temperature :
- -40°C~150°C TJ
- Max Operating Temperature :
- 150°C
- Power Dissipation :
- 2.8W
- Voltage - Rated DC :
- 60V
- Termination :
- SMD/SMT
- Rise Time :
- 29ns
- Current Rating :
- 86A
- Turn-Off Delay Time :
- 28 ns
- Current - Continuous Drain (Id) @ 25°C :
- 86A Tc
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 86A
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Drain to Source Resistance :
- 2MOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Contains Lead
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Nominal Vgs :
- 4 V
- Input Capacitance :
- 2.12nF
- Drain to Source Voltage (Vdss) :
- 60V
- Mounting Type :
- Surface Mount
- Package / Case :
- DirectFET™ Isometric MN
- FET Type :
- N-Channel
- Supplier Device Package :
- DIRECTFET™ MN
- Rds On Max :
- 7 mΩ
- Fall Time (Typ) :
- 13 ns
- Datasheets
- IRF6648TR1

N-Channel Tape & Reel (TR) 7mOhm @ 17A, 10V ±20V 2120pF @ 25V 50nC @ 10V 60V DirectFET™ Isometric MN
IRF6648TR1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2120pF @ 25V.This device conducts a continuous drain current (ID) of 86A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 28 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 2MOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF6648TR1 Features
a continuous drain current (ID) of 86A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 28 ns
single MOSFETs transistor is 2MOhm
a threshold voltage of 4V
a 60V drain to source voltage (Vdss)
IRF6648TR1 Applications
There are a lot of Infineon Technologies
IRF6648TR1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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