IRF6646TRPBF

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Mfr.Part #
IRF6646TRPBF
Manufacturer
Infineon Technologies
Package / Case
DirectFET™ Isometric MN
Datasheet
Download
Description
MOSFET N-CH 80V 12A DIRECTFET
Stock
35,465
In Stock :
35,465

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Width :
5.05mm
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
REACH SVHC :
No SVHC
Published :
2006
Number of Pins :
5
Number of Terminations :
3
Transistor Application :
SWITCHING
Lead Free :
Lead Free
Rise Time :
20ns
JESD-609 Code :
e1
Power Dissipation :
89W
Power Dissipation-Max :
2.8W Ta 89W Tc
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-30 Code :
R-XBCC-N3
Mounting Type :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Mount :
Surface Mount
Turn On Delay Time :
17 ns
Current Rating :
12A
Terminal Position :
BOTTOM
Input Capacitance (Ciss) (Max) @ Vds :
2060pF @ 25V
Height :
506μm
Threshold Voltage :
4.9V
Avalanche Energy Rating (Eas) :
230 mJ
Fall Time (Typ) :
12 ns
Voltage - Rated DC :
80V
Case Connection :
DRAIN
Package / Case :
DirectFET™ Isometric MN
Transistor Element Material :
SILICON
Length :
6.35mm
Pulsed Drain Current-Max (IDM) :
96A
Vgs(th) (Max) @ Id :
4.9V @ 150μA
Current - Continuous Drain (Id) @ 25°C :
12A Ta 68A Tc
Turn-Off Delay Time :
31 ns
Rds On (Max) @ Id, Vgs :
9.5m Ω @ 12A, 10V
Continuous Drain Current (ID) :
12mA
Factory Lead Time :
12 Weeks
Operating Temperature :
-40°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Series :
HEXFET®
Drain to Source Breakdown Voltage :
80V
ECCN Code :
EAR99
Number of Elements :
1
FET Type :
N-Channel
Drain Current-Max (Abs) (ID) :
68A
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Packaging :
Tape and Reel (TR)
Datasheets
IRF6646TRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6646TRPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:5, Number of Terminations:3, Mounting Type:Surface Mount, Package / Case:DirectFET™ Isometric MN, Operating Temperature:-40°C~150°C TJ, IRF6646TRPBF pinout, IRF6646TRPBF datasheet PDF, IRF6646TRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6646TRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF6646TRPBF


N-Channel Tape & Reel (TR) 9.5m Ω @ 12A, 10V ±20V 2060pF @ 25V 50nC @ 10V DirectFET™ Isometric MN

IRF6646TRPBF Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 230 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2060pF @ 25V.This device has a continuous drain current (ID) of [12mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=80V, the drain-source breakdown voltage is 80V.A device's drain current is its maximum continuous current, and this device's drain current is 68A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 31 ns.A maximum pulsed drain current of 96A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4.9V.Its overall power consumption can be reduced by using drive voltage (10V).

IRF6646TRPBF Features


the avalanche energy rating (Eas) is 230 mJ
a continuous drain current (ID) of 12mA
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 96A.
a threshold voltage of 4.9V


IRF6646TRPBF Applications


There are a lot of Infineon Technologies
IRF6646TRPBF applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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