IRF6646TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Recovery Time :

54 ns

Published :

2005

Turn On Delay Time :

17 ns

FET Type :

N-Channel

Operating Temperature :

-40°C~150°C TJ

Radiation Hardening :

No

Number of Pins :

5

Fall Time (Typ) :

12 ns

Max Operating Temperature :

150°C

Vgs (Max) :

±20V

Current Rating :

12A

Packaging :

Tape and Reel (TR)

Package / Case :

DirectFET™ Isometric MN

Series :

HEXFET®

Supplier Device Package :

DIRECTFET™ MN

Input Capacitance (Ciss) (Max) @ Vds :

2060pF @ 25V

Continuous Drain Current (ID) :

9.6A

Vgs(th) (Max) @ Id :

4.9V @ 150μA

Drain to Source Voltage (Vdss) :

80V

Threshold Voltage :

3V

Power Dissipation :

89W

Drain to Source Resistance :

7.6mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Min Operating Temperature :

-40°C

Lead Free :

Lead Free

Height :

506μm

Number of Elements :

1

Element Configuration :

Single

Termination :

SMD/SMT

Voltage - Rated DC :

80V

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

80V

Width :

5.05mm

Gate to Source Voltage (Vgs) :

20V

Dual Supply Voltage :

80V

Input Capacitance :

2.06nF

Current - Continuous Drain (Id) @ 25°C :

12A Ta 68A Tc

Turn-Off Delay Time :

31 ns

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Rds On Max :

9.5 mΩ

Resistance :

9.5MOhm

Length :

6.35mm

Nominal Vgs :

3 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

20ns

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

2.8W Ta 89W Tc

Rds On (Max) @ Id, Vgs :

9.5mOhm @ 12A, 10V

Mounting Type :

Surface Mount