IRF6645TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.2W Ta 42W Tc

Package / Case :

DirectFET™ Isometric SJ

Turn On Delay Time :

9.2 ns

Height :

410μm

Drain to Source Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant

Rise Time :

5ns

Length :

3.95mm

Series :

HEXFET®

Number of Terminations :

3

Published :

2008

Vgs (Max) :

±20V

FET Type :

N-Channel

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

35m Ω @ 5.7A, 10V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Number of Pins :

7

ECCN Code :

EAR99

Voltage - Rated DC :

100V

Fall Time (Typ) :

5.1 ns

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

BOTTOM

Packaging :

Tape and Reel (TR)

Current Rating :

5.7A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

5.7mA

Power Dissipation :

42W

Transistor Application :

SWITCHING

JESD-609 Code :

e1

Radiation Hardening :

No

Turn-Off Delay Time :

18 ns

Vgs(th) (Max) @ Id :

4.9V @ 50μA

Avalanche Energy Rating (Eas) :

29 mJ

Drain-source On Resistance-Max :

0.035Ohm

Pulsed Drain Current-Max (IDM) :

45A

Operating Temperature :

-40°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Contact Plating :

Tin

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-XBCC-N3

Operating Mode :

ENHANCEMENT MODE

Width :

3.95mm

Mount :

Surface Mount

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

5.7A Ta 25A Tc

Input Capacitance (Ciss) (Max) @ Vds :

890pF @ 25V