IRF6644TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Element Configuration :

Single

Dual Supply Voltage :

100V

Gate to Source Voltage (Vgs) :

20V

Length :

6.35mm

Vgs(th) (Max) @ Id :

4.8V @ 150μA

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Fall Time (Typ) :

16 ns

Rds On (Max) @ Id, Vgs :

13m Ω @ 10.3A, 10V

Operating Temperature :

-40°C~150°C TJ

Series :

HEXFET®

Nominal Vgs :

2.8 V

JESD-30 Code :

R-XBCC-N3

Current - Continuous Drain (Id) @ 25°C :

10.3A Ta 60A Tc

Turn-Off Delay Time :

34 ns

Radiation Hardening :

No

Power Dissipation-Max :

2.8W Ta 89W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

Pulsed Drain Current-Max (IDM) :

228A

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2.8W

Termination :

SMD/SMT

Lead Free :

Lead Free

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

86 mJ

Additional Feature :

LOW CONDUCTION LOSS

Rise Time :

26ns

Terminal Position :

BOTTOM

Mount :

Surface Mount

Published :

2005

Width :

5.05mm

Drain to Source Breakdown Voltage :

100V

Number of Elements :

1

Package / Case :

DirectFET™ Isometric MN

Number of Pins :

5

Continuous Drain Current (ID) :

8.3A

Threshold Voltage :

2.8V

Turn On Delay Time :

17 ns

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Recovery Time :

63 ns

FET Type :

N-Channel

Current Rating :

10.3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Height :

506μm

Resistance :

13mOhm

Mounting Type :

Surface Mount

Voltage - Rated DC :

100V