IRF6644TR1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

NO LEAD

DS Breakdown Voltage-Min :

100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

86 mJ

Packaging :

Tape and Reel (TR)

Published :

2005

Operating Temperature :

-40°C~150°C TJ

Terminal Position :

BOTTOM

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

10.3A Ta 60A Tc

FET Type :

N-Channel

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Pulsed Drain Current-Max (IDM) :

228A

JESD-30 Code :

R-XBCC-N3

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

Rds On (Max) @ Id, Vgs :

13m Ω @ 10.3A, 10V

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4.8V @ 150μA

Drain-source On Resistance-Max :

0.013Ohm

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

10A

Package / Case :

DirectFET™ Isometric MN

Additional Feature :

LOW CONDUCTION LOSS

Series :

HEXFET®

Power Dissipation-Max :

2.8W Ta 89W Tc

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

100V