IRF6643TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

JESD-30 Code :

R-XBCC-N3

Series :

HEXFET®

Length :

6.35mm

Number of Pins :

5

Peak Reflow Temperature (Cel) :

260

Package / Case :

DirectFET™ Isometric MZ

Turn-Off Delay Time :

13 ns

Rise Time :

5ns

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

6.2A Ta 35A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Fall Time (Typ) :

4.4 ns

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Radiation Hardening :

No

Vgs (Max) :

±20V

JESD-609 Code :

e1

Height :

508μm

Drain to Source Breakdown Voltage :

150V

Operating Temperature :

-40°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Threshold Voltage :

4V

Power Dissipation-Max :

2.8W Ta 89W Tc

Width :

5.0546mm

Continuous Drain Current (ID) :

6.2A

Terminal Position :

BOTTOM

Published :

2006

Transistor Element Material :

SILICON

Power Dissipation :

89W

Mount :

Surface Mount

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

34.5m Ω @ 7.6A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Turn On Delay Time :

9.2 ns

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2340pF @ 25V

Pulsed Drain Current-Max (IDM) :

76A

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4.9V @ 150μA

ECCN Code :

EAR99