IRF6643TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Termination :

SMD/SMT

Height :

508μm

Drain to Source Resistance :

29mOhm

Input Capacitance :

2.34nF

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

2340pF @ 25V

Nominal Vgs :

4 V

Length :

5.45mm

Lead Free :

Lead Free

Operating Temperature :

-40°C~150°C TJ

Resistance :

34.5mOhm

Vgs(th) (Max) @ Id :

4.9V @ 150μA

Turn-Off Delay Time :

13 ns

Rise Time :

5ns

Drain to Source Breakdown Voltage :

150V

Dual Supply Voltage :

150V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

DIRECTFET™ MZ

Rds On Max :

34.5 mΩ

Current - Continuous Drain (Id) @ 25°C :

6.2A Ta 35A Tc

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Series :

HEXFET®

Number of Elements :

1

Max Operating Temperature :

150°C

Rds On (Max) @ Id, Vgs :

34.5mOhm @ 7.6A, 10V

Vgs (Max) :

±20V

Element Configuration :

Single

Current Rating :

6.2A

Threshold Voltage :

4V

Power Dissipation :

2.8W

Continuous Drain Current (ID) :

6.2A

Turn On Delay Time :

9.2 ns

Fall Time (Typ) :

4.4 ns

Published :

2006

Drain to Source Voltage (Vdss) :

150V

Number of Pins :

7

Package / Case :

DirectFET™ Isometric MZ

Recovery Time :

100 ns

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

2.8W Ta 89W Tc

Mount :

Surface Mount

Min Operating Temperature :

-40°C

Voltage - Rated DC :

150V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Width :

5.05mm

RoHS Status :

RoHS Compliant