IRF6641TRPBF

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Mfr.Part #
IRF6641TRPBF
Manufacturer
Infineon Technologies
Package / Case
DirectFET™ Isometric MZ
Datasheet
Download
Description
MOSFET N-CH 200V 4.6A DIRECTFET
Stock
19,706
In Stock :
19,706

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
506μm
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Length :
6.35mm
FET Type :
N-Channel
Turn On Delay Time :
16 ns
Continuous Drain Current (ID) :
3.7A
Factory Lead Time :
12 Weeks
Gate to Source Voltage (Vgs) :
20V
Mount :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
2290pF @ 25V
Number of Pins :
5
Power Dissipation-Max :
2.8W Ta 89W Tc
Turn-Off Delay Time :
31 ns
Rds On (Max) @ Id, Vgs :
59.9m Ω @ 5.5A, 10V
Fall Time (Typ) :
6.5 ns
JESD-609 Code :
e1
Vgs(th) (Max) @ Id :
4.9V @ 150μA
Case Connection :
DRAIN
ECCN Code :
EAR99
Resistance :
51mOhm
Avalanche Energy Rating (Eas) :
46 mJ
Series :
HEXFET®
Pulsed Drain Current-Max (IDM) :
37A
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Published :
2007
Vgs (Max) :
±20V
Terminal Position :
BOTTOM
Package / Case :
DirectFET™ Isometric MZ
JESD-30 Code :
R-XBCC-N3
Gate Charge (Qg) (Max) @ Vgs :
48nC @ 10V
Mounting Type :
Surface Mount
Number of Terminations :
3
Packaging :
Tape and Reel (TR)
Current - Continuous Drain (Id) @ 25°C :
4.6A Ta 26A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Voltage - Rated DC :
200V
Radiation Hardening :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Width :
5.05mm
Drain Current-Max (Abs) (ID) :
26A
Rise Time :
11ns
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Operating Temperature :
-40°C~150°C TJ
Power Dissipation :
89W
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
200V
Configuration :
SINGLE WITH BUILT-IN DIODE
Current Rating :
4.6A
Datasheets
IRF6641TRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6641TRPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:5, Package / Case:DirectFET™ Isometric MZ, Mounting Type:Surface Mount, Number of Terminations:3, Operating Temperature:-40°C~150°C TJ, IRF6641TRPBF pinout, IRF6641TRPBF datasheet PDF, IRF6641TRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6641TRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF6641TRPBF


N-Channel Tape & Reel (TR) 59.9m Ω @ 5.5A, 10V ±20V 2290pF @ 25V 48nC @ 10V DirectFET™ Isometric MZ

IRF6641TRPBF Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 46 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2290pF @ 25V.This device conducts a continuous drain current (ID) of 3.7A, which is the maximum continuous current transistor can conduct.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 26A.When the device is turned off, a turn-off delay time of 31 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 37A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRF6641TRPBF Features


the avalanche energy rating (Eas) is 46 mJ
a continuous drain current (ID) of 3.7A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 37A.


IRF6641TRPBF Applications


There are a lot of Infineon Technologies
IRF6641TRPBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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