IRF6641TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

37A

Package / Case :

DirectFET™ Isometric MZ

Terminal Position :

BOTTOM

Current Rating :

4.6A

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

200V

Turn-Off Delay Time :

31 ns

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Avalanche Energy Rating (Eas) :

46 mJ

Drain Current-Max (Abs) (ID) :

26A

Series :

HEXFET®

Number of Terminations :

3

Case Connection :

DRAIN

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2290pF @ 25V

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.9V @ 150μA

Current - Continuous Drain (Id) @ 25°C :

4.6A Ta 26A Tc

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2007

Height :

506μm

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

200V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Lead Free :

Lead Free

Rise Time :

11ns

Mounting Type :

Surface Mount

Number of Pins :

5

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

3.7A

Power Dissipation :

89W

JESD-30 Code :

R-XBCC-N3

Resistance :

51mOhm

Length :

6.35mm

Turn On Delay Time :

16 ns

Rds On (Max) @ Id, Vgs :

59.9m Ω @ 5.5A, 10V

Number of Elements :

1

Transistor Element Material :

SILICON

Width :

5.05mm

Operating Temperature :

-40°C~150°C TJ

Fall Time (Typ) :

6.5 ns

Power Dissipation-Max :

2.8W Ta 89W Tc

JESD-609 Code :

e1