IRF6641TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Power Dissipation :

89W

Input Capacitance (Ciss) (Max) @ Vds :

2290pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

4.6A Ta 26A Tc

Packaging :

Cut Tape (CT)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

59.9mOhm @ 5.5A, 10V

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Drain to Source Breakdown Voltage :

200V

Vgs(th) (Max) @ Id :

4.9V @ 150μA

Vgs (Max) :

±20V

Drain to Source Resistance :

59.9mOhm

Operating Temperature :

-40°C~150°C TJ

Voltage - Rated DC :

200V

Element Configuration :

Single

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

5

FET Type :

N-Channel

Turn On Delay Time :

16 ns

Fall Time (Typ) :

6.5 ns

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

4 V

Length :

6.35mm

Threshold Voltage :

4V

Package / Case :

DirectFET™ Isometric MZ

Width :

5.05mm

Power Dissipation-Max :

2.8W Ta 89W Tc

Drain to Source Voltage (Vdss) :

200V

Continuous Drain Current (ID) :

3.7A

RoHS Status :

RoHS Compliant

Height :

506μm

Dual Supply Voltage :

200V

Min Operating Temperature :

-40°C

Supplier Device Package :

DIRECTFET™ MZ

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Mount :

Surface Mount

Published :

2007

Input Capacitance :

2.29nF

Series :

HEXFET®

Current Rating :

4.6A

REACH SVHC :

No SVHC

Rise Time :

11ns

Mounting Type :

Surface Mount

Recovery Time :

130 ns

Rds On Max :

59.9 mΩ

Termination :

SMD/SMT

Turn-Off Delay Time :

31 ns