IRF6638TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

37 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.0029Ohm

Radiation Hardening :

No

Operating Temperature :

-40°C~150°C TJ

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Continuous Drain Current (ID) :

20A

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 25A, 10V

Published :

2006

Terminal Finish :

TIN SILVER COPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Turn-Off Delay Time :

28 ns

Power Dissipation :

89W

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 4.5V

Transistor Application :

SWITCHING

Width :

5.05mm

Current Rating :

25A

Number of Pins :

5

Rise Time :

45ns

JESD-609 Code :

e1

Package / Case :

DirectFET™ Isometric MX

Voltage - Rated DC :

30V

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

30V

FET Type :

N-Channel

Power Dissipation-Max :

2.8W Ta 89W Tc

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

Height :

506μm

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

200A

Input Capacitance (Ciss) (Max) @ Vds :

3770pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

25A Ta 140A Tc

Vgs (Max) :

±20V

Terminal Position :

BOTTOM

Number of Terminations :

3

Lead Free :

Lead Free

Case Connection :

DRAIN

Turn On Delay Time :

19 ns

JESD-30 Code :

R-XBCC-N3

Fall Time (Typ) :

6.2 ns

Length :

6.35mm