IRF6638TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

28 ns

Fall Time (Typ) :

6.2 ns

Current - Continuous Drain (Id) @ 25°C :

25A Ta 140A Tc

Input Capacitance (Ciss) (Max) @ Vds :

3770pF @ 15V

Operating Temperature :

-40°C~150°C TJ

FET Type :

N-Channel

Published :

2006

Rds On (Max) @ Id, Vgs :

2.9mOhm @ 25A, 10V

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

2.8W Ta 89W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Number of Elements :

1

Drain to Source Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

30V

Nominal Vgs :

1.8 V

Min Operating Temperature :

-40°C

Power Dissipation :

89W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Supplier Device Package :

DIRECTFET™ MX

Number of Pins :

5

Width :

5.05mm

Mount :

Surface Mount

Turn On Delay Time :

19 ns

Rds On Max :

2.9 mΩ

Input Capacitance :

3.77nF

Radiation Hardening :

No

Package / Case :

DirectFET™ Isometric MX

Rise Time :

45ns

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Continuous Drain Current (ID) :

20A

Drain to Source Resistance :

3.9MOhm

Voltage - Rated DC :

30V

Max Operating Temperature :

150°C

Height :

506μm

Current Rating :

25A

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 4.5V

Lead Free :

Lead Free