IRF6637TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0077Ohm

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Vgs (Max) :

±20V

Operating Temperature :

-40°C~150°C TJ

Length :

6.35mm

Operating Mode :

ENHANCEMENT MODE

Package / Case :

DirectFET™ Isometric MP

Input Capacitance (Ciss) (Max) @ Vds :

1330pF @ 15V

Current Rating :

14A

Current - Continuous Drain (Id) @ 25°C :

14A Ta 59A Tc

Continuous Drain Current (ID) :

14mA

Turn-Off Delay Time :

14 ns

Transistor Application :

SWITCHING

Number of Elements :

1

Fall Time (Typ) :

3.8 ns

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Width :

5.05mm

JESD-609 Code :

e1

Drain to Source Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Power Dissipation :

89W

Published :

2006

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

506μm

Power Dissipation-Max :

2.3W Ta 42W Tc

JESD-30 Code :

R-XBCC-N3

Case Connection :

DRAIN

FET Type :

N-Channel

Voltage - Rated DC :

30V

Mounting Type :

Surface Mount

Series :

HEXFET®

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

BOTTOM

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

7.7m Ω @ 14A, 10V

Rise Time :

15ns

Number of Pins :

5

Turn On Delay Time :

12 ns

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.35V @ 250μA