IRF6637TR1PBF
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- Mfr.Part #
- IRF6637TR1PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MP
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 14A DIRECTFET
- Stock
- 7,083
- In Stock ：
- 7,083
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Min Operating Temperature :
- -40°C
- Fall Time (Typ) :
- 3.8 ns
- Supplier Device Package :
- DIRECTFET™ MP
- Power Dissipation :
- 89W
- Series :
- HEXFET®
- Drain to Source Voltage (Vdss) :
- 30V
- Mount :
- Surface Mount
- Package / Case :
- DirectFET™ Isometric MP
- Max Operating Temperature :
- 150°C
- Power Dissipation-Max :
- 2.3W Ta 42W Tc
- Turn On Delay Time :
- 12 ns
- Drain to Source Breakdown Voltage :
- 30V
- Vgs (Max) :
- ±20V
- Threshold Voltage :
- 1.8V
- FET Type :
- N-Channel
- Operating Temperature :
- -40°C~150°C TJ
- Rds On Max :
- 7.7 mΩ
- Radiation Hardening :
- No
- Published :
- 2006
- Mounting Type :
- Surface Mount
- Length :
- 6.35mm
- Rds On (Max) @ Id, Vgs :
- 7.7mOhm @ 14A, 10V
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 2.35V @ 250μA
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 15ns
- Voltage - Rated DC :
- 30V
- RoHS Status :
- RoHS Compliant
- Drain to Source Resistance :
- 10.8mOhm
- Turn-Off Delay Time :
- 14 ns
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta 59A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Nominal Vgs :
- 1.8 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance :
- 1.33nF
- Continuous Drain Current (ID) :
- 11A
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 4.5V
- Number of Pins :
- 5
- Input Capacitance (Ciss) (Max) @ Vds :
- 1330pF @ 15V
- Current Rating :
- 14A
- Datasheets
- IRF6637TR1PBF
N-Channel Tape & Reel (TR) 7.7mOhm @ 14A, 10V ±20V 1330pF @ 15V 17nC @ 4.5V 30V DirectFET™ Isometric MP
IRF6637TR1PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1330pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 11A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [14 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 10.8mOhm.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.8V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IRF6637TR1PBF Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 10.8mOhm
a threshold voltage of 1.8V
a 30V drain to source voltage (Vdss)
IRF6637TR1PBF Applications
There are a lot of Infineon Technologies
IRF6637TR1PBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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