IRF6637TR1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

1.33nF

Fall Time (Typ) :

3.8 ns

Rds On (Max) @ Id, Vgs :

7.7mOhm @ 14A, 10V

Max Operating Temperature :

150°C

Reverse Recovery Time :

13 ns

Nominal Vgs :

1.8 V

Published :

2006

Mounting Type :

Surface Mount

Rise Time :

15ns

Package / Case :

DirectFET™ Isometric MP

Min Operating Temperature :

-40°C

Packaging :

Tape and Reel (TR)

Supplier Device Package :

DIRECTFET™ MP

Power Dissipation :

2.3W

Rds On Max :

7.7 mΩ

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

2.35V @ 250μA

Drain to Source Breakdown Voltage :

30V

FET Type :

N-Channel

Series :

HEXFET®

Operating Temperature :

-40°C~150°C TJ

Dual Supply Voltage :

30V

Voltage - Rated DC :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1330pF @ 15V

Power Dissipation-Max :

2.3W Ta 42W Tc

Threshold Voltage :

1.8V

Current Rating :

14A

Termination :

SMD/SMT

Current - Continuous Drain (Id) @ 25°C :

14A Ta 59A Tc

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Continuous Drain Current (ID) :

14A

Lead Free :

Lead Free

Number of Pins :

7

Turn-Off Delay Time :

14 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

REACH SVHC :

No SVHC