IRF6636TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

20V

Rise Time :

19ns

Drain to Source Voltage (Vdss) :

20V

Published :

2006

Packaging :

Tape and Reel (TR)

Current Rating :

18A

Power Dissipation-Max :

2.2W Ta 42W Tc

Radiation Hardening :

No

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

18A Ta 81A Tc

Continuous Drain Current (ID) :

15A

Fall Time (Typ) :

6.2 ns

Voltage - Rated DC :

20V

Drain to Source Resistance :

6.4mOhm

Height :

506μm

Package / Case :

DirectFET™ Isometric ST

Input Capacitance (Ciss) (Max) @ Vds :

2420pF @ 10V

Lead Free :

Lead Free

Number of Pins :

3

Power Dissipation :

42W

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

Turn-Off Delay Time :

16 ns

Operating Temperature :

-40°C~150°C TJ

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

REACH SVHC :

No SVHC

Input Capacitance :

2.42nF

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On Max :

4.5 mΩ

Turn On Delay Time :

14 ns

Number of Elements :

1

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Min Operating Temperature :

-40°C

Nominal Vgs :

2.45 V

FET Type :

N-Channel

Resistance :

4.5mOhm

Rds On (Max) @ Id, Vgs :

4.5mOhm @ 18A, 10V

Width :

3.95mm

Supplier Device Package :

DIRECTFET™ ST