IRF6635TRPBF
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- Mfr.Part #
- IRF6635TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MX
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 32A DIRECTFET
- Stock
- 143,886
- In Stock ：
- 143,886
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 30V
- REACH SVHC :
- No SVHC
- Published :
- 2006
- Height :
- 506μm
- Series :
- HEXFET®
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 1.8m Ω @ 32A, 10V
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 32A Ta 180A Tc
- RoHS Status :
- RoHS Compliant
- Current Rating :
- 32A
- Power Dissipation-Max :
- 2.8W Ta 89W Tc
- JESD-30 Code :
- R-XBCC-N3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rise Time :
- 13ns
- Nominal Vgs :
- 1.8 V
- Operating Temperature :
- -40°C~150°C TJ
- Turn-Off Delay Time :
- 33 ns
- Factory Lead Time :
- 13 Weeks
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 71nC @ 4.5V
- Lead Free :
- Lead Free
- Width :
- 5.05mm
- Threshold Voltage :
- 1.8V
- Continuous Drain Current (ID) :
- 32mA
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 6.35mm
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 5970pF @ 15V
- Terminal Position :
- BOTTOM
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 8.3 ns
- Vgs(th) (Max) @ Id :
- 2.35V @ 250μA
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Package / Case :
- DirectFET™ Isometric MX
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Voltage - Rated DC :
- 30V
- Number of Elements :
- 1
- Turn On Delay Time :
- 21 ns
- Transistor Element Material :
- SILICON
- Number of Pins :
- 5
- Resistance :
- 1.8MOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Power Dissipation :
- 89W
- Datasheets
- IRF6635TRPBF
N-Channel Tape & Reel (TR) 1.8m Ω @ 32A, 10V ±20V 5970pF @ 15V 71nC @ 4.5V DirectFET™ Isometric MX
IRF6635TRPBF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5970pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 33 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 21 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1.8V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IRF6635TRPBF Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 32mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 33 ns
a threshold voltage of 1.8V
IRF6635TRPBF Applications
There are a lot of Infineon Technologies
IRF6635TRPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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