IRF6635TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.8W Ta 89W Tc

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Fall Time (Typ) :

8.3 ns

Input Capacitance :

5.97nF

Dual Supply Voltage :

30V

Turn On Delay Time :

21 ns

Current - Continuous Drain (Id) @ 25°C :

32A Ta 180A Tc

Continuous Drain Current (ID) :

25A

Max Operating Temperature :

150°C

Published :

2006

Nominal Vgs :

1.8 V

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-40°C~150°C TJ

FET Type :

N-Channel

Lead Free :

Lead Free

Number of Pins :

5

Termination :

SMD/SMT

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Supplier Device Package :

DIRECTFET™ MX

Number of Elements :

1

Resistance :

1.8MOhm

Power Dissipation :

89W

Package / Case :

DirectFET™ Isometric MX

Current Rating :

32A

Rds On (Max) @ Id, Vgs :

1.8mOhm @ 32A, 10V

Vgs(th) (Max) @ Id :

2.35V @ 250μA

Rise Time :

13ns

Vgs (Max) :

±20V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

5970pF @ 15V

Min Operating Temperature :

-40°C

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

33 ns

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

30V

Voltage - Rated DC :

30V

Drain to Source Resistance :

2.4MOhm

Rds On Max :

1.8 MΩ

Radiation Hardening :

No