IRF6635TR1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

1.8V

Rds On Max :

1.8 MΩ

Continuous Drain Current (ID) :

25A

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

32A Ta 180A Tc

Lead Free :

Lead Free

Series :

HEXFET®

Supplier Device Package :

DIRECTFET™ MX

Power Dissipation :

2.8W

REACH SVHC :

No SVHC

Max Operating Temperature :

150°C

Rds On (Max) @ Id, Vgs :

1.8mOhm @ 32A, 10V

Power Dissipation-Max :

2.8W Ta 89W Tc

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

5970pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 4.5V

Operating Temperature :

-40°C~150°C TJ

Number of Pins :

7

Voltage - Rated DC :

30V

Published :

2005

RoHS Status :

Non-RoHS Compliant

Current Rating :

32A

Input Capacitance :

5.97nF

Min Operating Temperature :

-40°C

Package / Case :

DirectFET™ Isometric MX

Vgs(th) (Max) @ Id :

2.35V @ 250μA

Drain to Source Voltage (Vdss) :

30V

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mount :

Surface Mount

Rise Time :

13ns

Packaging :

Tape and Reel (TR)