IRF6633TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

5.05mm

Continuous Drain Current (ID) :

16mA

Current - Continuous Drain (Id) @ 25°C :

16A Ta 59A Tc

Terminal Position :

BOTTOM

Package / Case :

DirectFET™ Isometric MP

Drain Current-Max (Abs) (ID) :

59A

Drain to Source Breakdown Voltage :

20V

Mount :

Surface Mount

Turn On Delay Time :

9.7 ns

Resistance :

5.6MOhm

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Number of Elements :

1

Operating Temperature :

-40°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

4.3 ns

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Vgs (Max) :

±20V

Length :

6.35mm

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 16A, 10V

Power Dissipation :

89W

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Current Rating :

16A

Number of Pins :

3

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Rise Time :

31ns

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 10V

Series :

HEXFET®

Number of Terminations :

3

Turn-Off Delay Time :

12 ns

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

TIN SILVER COPPER

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

2.3W Ta 89W Tc

Voltage - Rated DC :

20V

Height :

676μm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Case Connection :

DRAIN

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

JESD-609 Code :

e1