IRF6633TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

12 ns

Vgs (Max) :

±20V

Length :

6.35mm

Rds On (Max) @ Id, Vgs :

5.6mOhm @ 16A, 10V

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 10V

Supplier Device Package :

DIRECTFET™ MP

Threshold Voltage :

1.8V

Drain to Source Resistance :

9.4mOhm

Height :

676μm

Package / Case :

DirectFET™ Isometric MP

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

16A Ta 59A Tc

Series :

HEXFET®

Power Dissipation :

89W

Voltage - Rated DC :

20V

Rise Time :

31ns

Min Operating Temperature :

-40°C

Current Rating :

16A

REACH SVHC :

No SVHC

Turn On Delay Time :

9.7 ns

FET Type :

N-Channel

Number of Pins :

5

Drain to Source Breakdown Voltage :

20V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Rds On Max :

5.6 mΩ

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Number of Elements :

1

Radiation Hardening :

No

Resistance :

5.6MOhm

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Continuous Drain Current (ID) :

13A

Nominal Vgs :

1.8 V

Input Capacitance :

1.25nF

Fall Time (Typ) :

4.3 ns

Width :

5.05mm

Max Operating Temperature :

150°C

Mount :

Surface Mount

Published :

2006

Power Dissipation-Max :

2.3W Ta 89W Tc