IRF6633TR1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

1.25nF

Power Dissipation-Max :

2.3W Ta 42W Tc

Published :

2006

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Current - Continuous Drain (Id) @ 25°C :

16A Ta 59A Tc

Rise Time :

31ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Supplier Device Package :

DIRECTFET™ MP

Rds On (Max) @ Id, Vgs :

5.6mOhm @ 16A, 10V

REACH SVHC :

No SVHC

Number of Pins :

7

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Threshold Voltage :

1.8V

Fall Time (Typ) :

4.3 ns

Mount :

Surface Mount

Continuous Drain Current (ID) :

16A

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Vgs (Max) :

±20V

Operating Temperature :

-40°C~150°C TJ

Termination :

SMD/SMT

Rds On Max :

5.6 mΩ

Package / Case :

DirectFET™ Isometric MP

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Power Dissipation :

2.3W

Drain to Source Breakdown Voltage :

20V

Reverse Recovery Time :

18 ns

Max Operating Temperature :

150°C

Nominal Vgs :

1.8 V

Turn-Off Delay Time :

12 ns

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 10V

Min Operating Temperature :

-40°C