IRF6633ATRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Drain-source On Resistance-Max :

0.0056Ohm

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

6.9 ns

ECCN Code :

EAR99

Radiation Hardening :

No

Number of Elements :

1

Terminal Position :

BOTTOM

Vgs (Max) :

±20V

JESD-609 Code :

e1

Length :

6.35mm

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 16A, 10V

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.3W Ta 42W Tc

Power Dissipation :

42W

Transistor Element Material :

SILICON

Terminal Finish :

TIN SILVER COPPER

Drain Current-Max (Abs) (ID) :

69A

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

Fall Time (Typ) :

7.7 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

700μm

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Turn-Off Delay Time :

8.4 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

20V

Avalanche Energy Rating (Eas) :

65 mJ

FET Type :

N-Channel

Package / Case :

DirectFET™ Isometric MU

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

16A

Packaging :

Tape and Reel (TR)

Published :

2008

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Width :

5.05mm

Number of Pins :

3

Operating Temperature :

-40°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1410pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

16A Ta 69A Tc

Series :

HEXFET®

Rise Time :

13ns

Mounting Type :

Surface Mount