IRF6629TRPBF

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Mfr.Part #
IRF6629TRPBF
Manufacturer
Infineon Technologies
Package / Case
DirectFET™ Isometric MX
Datasheet
Download
Description
MOSFET N-CH 25V 29A DIRECTFET
Stock
8,331
In Stock :
8,331

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
506μm
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Drain Current-Max (Abs) (ID) :
180A
Series :
HEXFET®
Power Dissipation :
100W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
30
Drain to Source Breakdown Voltage :
25V
Peak Reflow Temperature (Cel) :
260
Continuous Drain Current (ID) :
23A
Turn On Delay Time :
20 ns
JESD-609 Code :
e1
Number of Terminations :
3
Case Connection :
DRAIN
Drain-source On Resistance-Max :
0.0021Ohm
Radiation Hardening :
No
Mount :
Surface Mount
Operating Temperature :
-40°C~150°C TJ
Package / Case :
DirectFET™ Isometric MX
Configuration :
SINGLE WITH BUILT-IN DIODE
Avalanche Energy Rating (Eas) :
1170 mJ
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
2.1m Ω @ 29A, 10V
Vgs(th) (Max) @ Id :
2.35V @ 100μA
Rise Time :
67ns
Width :
5.05mm
Transistor Application :
SWITCHING
Fall Time (Typ) :
7.4 ns
Packaging :
Tape and Reel (TR)
Number of Pins :
5
Terminal Position :
BOTTOM
Turn-Off Delay Time :
20 ns
Current Rating :
29A
ECCN Code :
EAR99
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
29A Ta 180A Tc
Lead Free :
Lead Free
Voltage - Rated DC :
25V
Pulsed Drain Current-Max (IDM) :
230A
Mounting Type :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
Terminal Finish :
TIN SILVER COPPER
Gate Charge (Qg) (Max) @ Vgs :
51nC @ 4.5V
Transistor Element Material :
SILICON
Length :
6.35mm
RoHS Status :
RoHS Compliant
FET Type :
N-Channel
Number of Elements :
1
Published :
2006
JESD-30 Code :
R-XBCC-N3
Power Dissipation-Max :
2.8W Ta 100W Tc
Input Capacitance (Ciss) (Max) @ Vds :
4260pF @ 13V
Datasheets
IRF6629TRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6629TRPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-40°C~150°C TJ, Package / Case:DirectFET™ Isometric MX, Number of Pins:5, Mounting Type:Surface Mount, IRF6629TRPBF pinout, IRF6629TRPBF datasheet PDF, IRF6629TRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6629TRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF6629TRPBF


N-Channel Tape & Reel (TR) 2.1m Ω @ 29A, 10V ±20V 4260pF @ 13V 51nC @ 4.5V DirectFET™ Isometric MX

IRF6629TRPBF Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1170 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4260pF @ 13V.This device conducts a continuous drain current (ID) of 23A, which is the maximum continuous current transistor can conduct.Using VGS=25V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 25V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 180A.When the device is turned off, a turn-off delay time of 20 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 230A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

IRF6629TRPBF Features


the avalanche energy rating (Eas) is 1170 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 230A.


IRF6629TRPBF Applications


There are a lot of Infineon Technologies
IRF6629TRPBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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