IRF6628TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 27A, 10V

Operating Temperature :

-40°C~150°C TJ

Vgs (Max) :

±20V

Length :

6.35mm

Avalanche Energy Rating (Eas) :

38 mJ

ECCN Code :

EAR99

Continuous Drain Current (ID) :

22A

Fall Time (Typ) :

6.7 ns

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 4.5V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

27A Ta 160A Tc

Series :

HEXFET®

Power Dissipation :

96W

Turn-Off Delay Time :

17 ns

Rise Time :

83ns

JESD-30 Code :

R-XBCC-N3

Case Connection :

DRAIN

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Voltage - Rated DC :

25V

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

5

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

25V

Package / Case :

DirectFET™ Isometric MX

Terminal Position :

BOTTOM

FET Type :

N-Channel

Lead Free :

Lead Free

Width :

5.05mm

Mounting Type :

Surface Mount

Number of Terminations :

3

Resistance :

2.5MOhm

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

160A

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Current Rating :

27A

Pulsed Drain Current-Max (IDM) :

220A

Published :

2006

Turn On Delay Time :

20 ns

Height :

506μm

Power Dissipation-Max :

2.8W Ta 96W Tc

Input Capacitance (Ciss) (Max) @ Vds :

3770pF @ 15V