IRF6628TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Published :

2006

Power Dissipation :

96W

Resistance :

2.5MOhm

Turn On Delay Time :

20 ns

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

25V

Number of Elements :

1

RoHS Status :

RoHS Compliant

Dual Supply Voltage :

25V

Rds On Max :

2.5 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

25V

Turn-Off Delay Time :

17 ns

Mount :

Surface Mount

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Drain to Source Resistance :

3.3MOhm

Package / Case :

DirectFET™ Isometric MX

Power Dissipation-Max :

2.8W Ta 96W Tc

Fall Time (Typ) :

6.7 ns

Termination :

SMD/SMT

Supplier Device Package :

DIRECTFET™ MX

Radiation Hardening :

No

Continuous Drain Current (ID) :

22A

Current Rating :

27A

Number of Pins :

5

Length :

6.35mm

Rds On (Max) @ Id, Vgs :

2.5mOhm @ 27A, 10V

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 4.5V

Input Capacitance :

3.77nF

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Operating Temperature :

-40°C~150°C TJ

Voltage - Rated DC :

25V

Rise Time :

83ns

Current - Continuous Drain (Id) @ 25°C :

27A Ta 160A Tc

Min Operating Temperature :

-40°C

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Nominal Vgs :

1.9 V

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

3770pF @ 15V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V