IRF6626TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

3.95mm

Resistance :

5.4mOhm

Input Capacitance :

2.38nF

Drain to Source Breakdown Voltage :

30V

Number of Pins :

5

Supplier Device Package :

DIRECTFET™ ST

Length :

4.826mm

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

5.4mOhm @ 16A, 10V

Mount :

Surface Mount

Continuous Drain Current (ID) :

13A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Vgs(th) (Max) @ Id :

2.35V @ 250μA

Rise Time :

15ns

Height :

506μm

Lead Free :

Lead Free

Min Operating Temperature :

-40°C

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Voltage - Rated DC :

30V

Published :

2006

Packaging :

Tape and Reel (TR)

Current Rating :

16A

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

16A Ta 72A Tc

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

2380pF @ 15V

Drain to Source Resistance :

7.1mOhm

Fall Time (Typ) :

4.5 ns

Drain to Source Voltage (Vdss) :

30V

Power Dissipation :

42W

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Vgs (Max) :

±20V

Operating Temperature :

-40°C~150°C TJ

Turn On Delay Time :

13 ns

RoHS Status :

RoHS Compliant

Rds On Max :

5.4 mΩ

FET Type :

N-Channel

Package / Case :

DirectFET™ Isometric ST

Power Dissipation-Max :

2.2W Ta 42W Tc

Max Operating Temperature :

150°C

Turn-Off Delay Time :

17 ns