IRF6626TR1PBF
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- Mfr.Part #
- IRF6626TR1PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric ST
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 16A DIRECTFET
- Stock
- 6,500
- In Stock ：
- 6,500
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2380pF @ 15V
- Min Operating Temperature :
- -40°C
- RoHS Status :
- RoHS Compliant
- Width :
- 3.95mm
- Operating Temperature :
- -40°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 30V
- Turn On Delay Time :
- 13 ns
- Nominal Vgs :
- 2.35 V
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 13A
- Supplier Device Package :
- DIRECTFET™ ST
- Resistance :
- 5.4mOhm
- Length :
- 4.826mm
- Published :
- 2006
- Rds On (Max) @ Id, Vgs :
- 5.4mOhm @ 16A, 10V
- Current Rating :
- 16A
- Radiation Hardening :
- No
- Rds On Max :
- 5.4 mΩ
- Power Dissipation :
- 42W
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Number of Pins :
- 5
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Resistance :
- 7.1mOhm
- Max Operating Temperature :
- 150°C
- Turn-Off Delay Time :
- 17 ns
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 4.5V
- Power Dissipation-Max :
- 2.2W Ta 42W Tc
- Height :
- 506μm
- Current - Continuous Drain (Id) @ 25°C :
- 16A Ta 72A Tc
- Input Capacitance :
- 2.38nF
- Mounting Type :
- Surface Mount
- Series :
- HEXFET®
- Vgs(th) (Max) @ Id :
- 2.35V @ 250μA
- FET Type :
- N-Channel
- Package / Case :
- DirectFET™ Isometric ST
- Rise Time :
- 15ns
- Drain to Source Breakdown Voltage :
- 30V
- Fall Time (Typ) :
- 4.5 ns
- Datasheets
- IRF6626TR1PBF
N-Channel Tape & Reel (TR) 5.4mOhm @ 16A, 10V ±20V 2380pF @ 15V 29nC @ 4.5V 30V DirectFET™ Isometric ST
IRF6626TR1PBF Overview
A device's maximum input capacitance is 2380pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 13A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 17 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 7.1mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRF6626TR1PBF Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 7.1mOhm
a 30V drain to source voltage (Vdss)
IRF6626TR1PBF Applications
There are a lot of Infineon Technologies
IRF6626TR1PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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