IRF6626TR1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

16A Ta 72A Tc

Input Capacitance :

2.38nF

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Reverse Recovery Time :

15 ns

Termination :

SMD/SMT

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Package / Case :

DirectFET™ Isometric ST

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mount :

Surface Mount

Rds On Max :

5.4 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

2380pF @ 15V

Threshold Voltage :

2.35V

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

16A

RoHS Status :

Non-RoHS Compliant

Nominal Vgs :

2.35 V

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Power Dissipation :

2.2W

Rise Time :

15ns

Drain to Source Resistance :

4mOhm

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

2.35V @ 250μA

Voltage - Rated DC :

30V

Min Operating Temperature :

-40°C

FET Type :

N-Channel

Turn-Off Delay Time :

17 ns

Rds On (Max) @ Id, Vgs :

5.4mOhm @ 16A, 10V

Operating Temperature :

-40°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

2.2W Ta 42W Tc

Supplier Device Package :

DIRECTFET™ ST

Lead Free :

Lead Free

Current Rating :

16A

Fall Time (Typ) :

4.5 ns

Number of Pins :

7

Published :

2005

Packaging :

Tape and Reel (TR)