IRF6623TR1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Number of Pins :

7

REACH SVHC :

No SVHC

Width :

3.95mm

Threshold Voltage :

2.2V

Reverse Recovery Time :

20 ns

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Drain to Source Breakdown Voltage :

20V

Power Dissipation :

2.1W

Min Operating Temperature :

-40°C

Supplier Device Package :

DIRECTFET™ ST

Drain to Source Resistance :

4.4Ohm

Voltage - Rated DC :

20V

Current Rating :

16A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Dual Supply Voltage :

20V

Nominal Vgs :

2.2 V

Rise Time :

40ns

Vgs(th) (Max) @ Id :

2.2V @ 250µA

FET Type :

N-Channel

Input Capacitance :

1.36nF

Rds On Max :

5.7 mΩ

Power Dissipation-Max :

1.4W Ta 42W Tc

Mounting Type :

Surface Mount

Package / Case :

DirectFET™ Isometric ST

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

20V

Radiation Hardening :

No

Max Operating Temperature :

150°C

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Continuous Drain Current (ID) :

55A

Lead Free :

Lead Free

Published :

2005

Operating Temperature :

-40°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

16A Ta 55A Tc

Rds On (Max) @ Id, Vgs :

5.7mOhm @ 15A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1360pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Resistance :

5.7mOhm

Turn-Off Delay Time :

12 ns

Vgs (Max) :

±20V