IRF6622TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

13 ns

Input Capacitance (Ciss) (Max) @ Vds :

1450pF @ 13V

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

25V

Mounting Type :

Surface Mount

Number of Elements :

1

Operating Temperature :

-40°C~150°C TJ

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 15A, 10V

Pulsed Drain Current-Max (IDM) :

120A

Length :

4.826mm

Avalanche Energy Rating (Eas) :

13 mJ

Current - Continuous Drain (Id) @ 25°C :

15A Ta 59A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

4.6 ns

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

506μm

Power Dissipation-Max :

2.2W Ta 34W Tc

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

3.95mm

Continuous Drain Current (ID) :

12A

Mount :

Surface Mount

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

FET Type :

N-Channel

Voltage - Rated DC :

25V

Series :

HEXFET®

Vgs (Max) :

±20V

Rise Time :

16ns

ECCN Code :

EAR99

JESD-30 Code :

R-XBCC-N3

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0063Ohm

Packaging :

Tape and Reel (TR)

Terminal Position :

BOTTOM

Current Rating :

15A

Published :

2006

Radiation Hardening :

No

Turn On Delay Time :

9.4 ns

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

5

Package / Case :

DirectFET™ Isometric SQ

Transistor Element Material :

SILICON

Number of Terminations :

3

Power Dissipation :

34W