IRF6621TRPBF

Share

Or copy the link below:

Mfr.Part #
IRF6621TRPBF
Manufacturer
Infineon Technologies
Package / Case
DirectFET™ Isometric SQ
Datasheet
Download
Description
MOSFET N-CH 30V 12A DIRECTFET
Stock
35,466
In Stock :
35,466

Request A Quote(RFQ)

* Fullname:
* Company:
* E-Mail:
  Phone:
  Comment:
* Quantity:
Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.0091Ohm
JESD-609 Code :
e1
Mount :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
1460pF @ 15V
Continuous Drain Current (ID) :
9.6A
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Power Dissipation-Max :
2.2W Ta 42W Tc
Mounting Type :
Surface Mount
Terminal Position :
BOTTOM
Lead Free :
Lead Free
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Vgs (Max) :
±20V
Series :
HEXFET®
Turn-Off Delay Time :
16 ns
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
9.1m Ω @ 12A, 10V
Fall Time (Typ) :
4.1 ns
Voltage - Rated DC :
30V
Number of Pins :
5
Operating Mode :
ENHANCEMENT MODE
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminations :
2
JESD-30 Code :
R-XBCC-N2
Current - Continuous Drain (Id) @ 25°C :
12A Ta 55A Tc
Transistor Element Material :
SILICON
Power Dissipation :
42W
Case Connection :
DRAIN
Pulsed Drain Current-Max (IDM) :
96A
Rise Time :
14ns
Package / Case :
DirectFET™ Isometric SQ
Width :
3.95mm
ECCN Code :
EAR99
Number of Elements :
1
Operating Temperature :
-40°C~150°C TJ
Length :
4.826mm
Factory Lead Time :
13 Weeks
Radiation Hardening :
No
Nominal Vgs :
1.8 V
Height :
506μm
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
2.25V @ 250μA
Turn On Delay Time :
12 ns
Published :
2005
REACH SVHC :
No SVHC
Gate Charge (Qg) (Max) @ Vgs :
17.5nC @ 4.5V
Current Rating :
12A
Drain to Source Breakdown Voltage :
30V
Packaging :
Tape and Reel (TR)
Avalanche Energy Rating (Eas) :
13 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Datasheets
IRF6621TRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6621TRPBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:5, Number of Terminations:2, Package / Case:DirectFET™ Isometric SQ, Operating Temperature:-40°C~150°C TJ, IRF6621TRPBF pinout, IRF6621TRPBF datasheet PDF, IRF6621TRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6621TRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF6621TRPBF


N-Channel Tape & Reel (TR) 9.1m Ω @ 12A, 10V ±20V 1460pF @ 15V 17.5nC @ 4.5V DirectFET™ Isometric SQ

IRF6621TRPBF Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 13 mJ.The maximum input capacitance of this device is 1460pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 9.6A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 16 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 96A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

IRF6621TRPBF Features


the avalanche energy rating (Eas) is 13 mJ
a continuous drain current (ID) of 9.6A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 16 ns
based on its rated peak drain current 96A.


IRF6621TRPBF Applications


There are a lot of Infineon Technologies
IRF6621TRPBF applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Purchase

You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.

RFQ (Request for Quotations)

It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.

Payment Method

For your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.

IMPORTANT NOTICE

You may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.

Shipping Method

Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...

Shipping Cost

Shipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.

The basic freight (for package ≤0.5 KG ) depends on the time zones and countries

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.

Manufacturer related products

Catalog related products

RFQ
BOM