IRF6621TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Transistor Element Material :

SILICON

Width :

3.95mm

Operating Temperature :

-40°C~150°C TJ

Factory Lead Time :

13 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1460pF @ 15V

Radiation Hardening :

No

Turn On Delay Time :

12 ns

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Voltage - Rated DC :

30V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

4.1 ns

FET Type :

N-Channel

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Current Rating :

12A

Pulsed Drain Current-Max (IDM) :

96A

Height :

506μm

Rise Time :

14ns

Length :

4.826mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Published :

2005

ECCN Code :

EAR99

Power Dissipation :

42W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

2.2W Ta 42W Tc

Number of Terminations :

2

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

9.1m Ω @ 12A, 10V

JESD-609 Code :

e1

Gate Charge (Qg) (Max) @ Vgs :

17.5nC @ 4.5V

Package / Case :

DirectFET™ Isometric SQ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Current - Continuous Drain (Id) @ 25°C :

12A Ta 55A Tc

Number of Pins :

5

Continuous Drain Current (ID) :

9.6A

Turn-Off Delay Time :

16 ns

Avalanche Energy Rating (Eas) :

13 mJ

Drain-source On Resistance-Max :

0.0091Ohm

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Nominal Vgs :

1.8 V

REACH SVHC :

No SVHC

JESD-30 Code :

R-XBCC-N2

Terminal Position :

BOTTOM

Drain to Source Breakdown Voltage :

30V

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free