IRF6621TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2006

Rise Time :

14ns

Rds On (Max) @ Id, Vgs :

9.1mOhm @ 12A, 10V

Vgs (Max) :

±20V

Mount :

Surface Mount

Lead Free :

Lead Free

Input Capacitance :

1.46nF

Packaging :

Tape and Reel (TR)

Rds On Max :

9.1 mΩ

Height :

506μm

Package / Case :

DirectFET™ Isometric SQ

Continuous Drain Current (ID) :

9.6A

Number of Pins :

5

Fall Time (Typ) :

4.1 ns

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Turn-Off Delay Time :

16 ns

Current - Continuous Drain (Id) @ 25°C :

12A Ta 55A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1460pF @ 15V

Series :

HEXFET®

REACH SVHC :

No SVHC

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-40°C~150°C TJ

FET Type :

N-Channel

Power Dissipation-Max :

2.2W Ta 42W Tc

Min Operating Temperature :

-40°C

Gate Charge (Qg) (Max) @ Vgs :

17.5nC @ 4.5V

Drain to Source Voltage (Vdss) :

30V

Max Operating Temperature :

150°C

Drain to Source Resistance :

12.1mOhm

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Turn On Delay Time :

12 ns

Current Rating :

12A

Voltage - Rated DC :

20V

Drain to Source Breakdown Voltage :

30V

Width :

3.95mm

Radiation Hardening :

No

Length :

4.826mm

Threshold Voltage :

1.8V

Supplier Device Package :

DIRECTFET™ SQ

Nominal Vgs :

1.8 V

Power Dissipation :

42W