IRF6620TRPBF

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Mfr.Part #
IRF6620TRPBF
Manufacturer
Infineon Technologies
Package / Case
DirectFET™ Isometric MX
Datasheet
Download
Description
MOSFET N-CH 20V 27A DIRECTFET
Stock
14,689
In Stock :
14,689

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Lead Free :
Lead Free
Turn On Delay Time :
18 ns
Pulsed Drain Current-Max (IDM) :
220A
Number of Elements :
1
Operating Temperature :
-40°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 4.5V
Vgs (Max) :
±20V
Configuration :
SINGLE WITH BUILT-IN DIODE
Fall Time (Typ) :
6.6 ns
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e1
Rise Time :
80ns
ECCN Code :
EAR99
Terminal Position :
BOTTOM
Drain to Source Breakdown Voltage :
20V
Number of Pins :
5
Mounting Type :
Surface Mount
Mount :
Surface Mount
Rds On (Max) @ Id, Vgs :
2.7m Ω @ 27A, 10V
Case Connection :
DRAIN
FET Type :
N-Channel
Transistor Application :
SWITCHING
JESD-30 Code :
R-XBCC-N3
Avalanche Energy Rating (Eas) :
39 mJ
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
4130pF @ 10V
Additional Feature :
LOW CONDUCTION LOSS
Current Rating :
27A
Series :
HEXFET®
Published :
2006
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Nominal Vgs :
2.45 V
Factory Lead Time :
12 Weeks
Length :
6.35mm
Number of Terminations :
3
Drain-source On Resistance-Max :
0.0027Ohm
Power Dissipation :
89W
Turn-Off Delay Time :
20 ns
REACH SVHC :
No SVHC
Package / Case :
DirectFET™ Isometric MX
Height :
506μm
Power Dissipation-Max :
2.8W Ta 89W Tc
Voltage - Rated DC :
20V
Width :
5.05mm
Gate to Source Voltage (Vgs) :
20V
Radiation Hardening :
No
Vgs(th) (Max) @ Id :
2.45V @ 250μA
Current - Continuous Drain (Id) @ 25°C :
27A Ta 150A Tc
Continuous Drain Current (ID) :
22A
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Datasheets
IRF6620TRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6620TRPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~150°C TJ, Number of Pins:5, Mounting Type:Surface Mount, Number of Terminations:3, Package / Case:DirectFET™ Isometric MX, IRF6620TRPBF pinout, IRF6620TRPBF datasheet PDF, IRF6620TRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6620TRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF6620TRPBF


N-Channel Tape & Reel (TR) 2.7m Ω @ 27A, 10V ±20V 4130pF @ 10V 42nC @ 4.5V DirectFET™ Isometric MX

IRF6620TRPBF Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 39 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4130pF @ 10V.This device conducts a continuous drain current (ID) of 22A, which is the maximum continuous current transistor can conduct.Using VGS=20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 20 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 220A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 18 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

IRF6620TRPBF Features


the avalanche energy rating (Eas) is 39 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 220A.


IRF6620TRPBF Applications


There are a lot of Infineon Technologies
IRF6620TRPBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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