IRF6620TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Input Capacitance :

4.13nF

Package / Case :

DirectFET™ Isometric MX

Current Rating :

27A

Rds On (Max) @ Id, Vgs :

2.7mOhm @ 27A, 10V

Rds On Max :

2.7 mΩ

Turn On Delay Time :

18 ns

Turn-Off Delay Time :

20 ns

Series :

HEXFET®

Max Operating Temperature :

150°C

Resistance :

2.7MOhm

Supplier Device Package :

DIRECTFET™ MX

Current - Continuous Drain (Id) @ 25°C :

27A Ta 150A Tc

Drain to Source Breakdown Voltage :

20V

Lead Free :

Lead Free

Length :

6.35mm

Input Capacitance (Ciss) (Max) @ Vds :

4130pF @ 10V

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Operating Temperature :

-40°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

2.8W Ta 89W Tc

Radiation Hardening :

No

Drain to Source Resistance :

3.6mOhm

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

22A

Min Operating Temperature :

-40°C

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

Height :

506μm

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

20V

Number of Pins :

5

Power Dissipation :

89W

Number of Elements :

1

Width :

5.05mm

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 4.5V

Published :

2006

Voltage - Rated DC :

20V

Mounting Type :

Surface Mount

Rise Time :

80ns

Fall Time (Typ) :

6.6 ns

Nominal Vgs :

2.45 V