IRF6620TR1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2005

Rds On (Max) @ Id, Vgs :

2.7mOhm @ 27A, 10V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Rds On Max :

2.7 mΩ

FET Type :

N-Channel

Max Operating Temperature :

150°C

Fall Time (Typ) :

6.6 ns

Power Dissipation :

2.8W

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain to Source Resistance :

2.1Ohm

Number of Pins :

7

Supplier Device Package :

DIRECTFET™ MX

Current Rating :

27A

Resistance :

2.7MOhm

Current - Continuous Drain (Id) @ 25°C :

27A Ta 150A Tc

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Voltage - Rated DC :

20V

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 4.5V

Input Capacitance :

4.13nF

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

22A

Turn-Off Delay Time :

20 ns

Width :

5.05mm

Reverse Recovery Time :

23 ns

Lead Free :

Lead Free

Mount :

Surface Mount

Threshold Voltage :

2.45V

Drain to Source Voltage (Vdss) :

20V

Series :

HEXFET®

Drain to Source Breakdown Voltage :

20V

Package / Case :

DirectFET™ Isometric MX

Min Operating Temperature :

-40°C

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

4130pF @ 10V

Vgs (Max) :

±20V

Nominal Vgs :

2.45 V

Rise Time :

80ns

Power Dissipation-Max :

2.8W Ta 89W Tc

REACH SVHC :

No SVHC

Dual Supply Voltage :

20V

RoHS Status :

Non-RoHS Compliant

Turn On Delay Time :

18 ns