IRF6619TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

20V

Drain-source On Resistance-Max :

0.0022Ohm

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Package / Case :

DirectFET™ Isometric MX

Operating Temperature :

-40°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

30A Ta 150A Tc

Turn-Off Delay Time :

25 ns

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

24A

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 30A, 10V

Turn On Delay Time :

21 ns

Pulsed Drain Current-Max (IDM) :

240A

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Current Rating :

30A

Terminal Position :

BOTTOM

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

Radiation Hardening :

No

Length :

6.35mm

Height :

506μm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Terminal Finish :

TIN SILVER COPPER

Fall Time (Typ) :

9.3 ns

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

2.8W Ta 89W Tc

Width :

5.05mm

Avalanche Energy Rating (Eas) :

240 mJ

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Published :

2006

Input Capacitance (Ciss) (Max) @ Vds :

5040pF @ 10V

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-XBCC-N3

JESD-609 Code :

e1

Number of Pins :

5

Power Dissipation :

89W

Number of Terminations :

3

Series :

HEXFET®

Number of Elements :

1

Rise Time :

71ns