IRF6619TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Voltage - Rated DC :

20V

Turn On Delay Time :

21 ns

Power Dissipation-Max :

2.8W Ta 89W Tc

Turn-Off Delay Time :

25 ns

Max Operating Temperature :

150°C

Drain to Source Breakdown Voltage :

20V

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

2.2mOhm @ 30A, 10V

Vgs (Max) :

±20V

Height :

506μm

Series :

HEXFET®

Continuous Drain Current (ID) :

24A

Power Dissipation :

89W

Drain to Source Voltage (Vdss) :

20V

Nominal Vgs :

1.55 V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Package / Case :

DirectFET™ Isometric MX

Current - Continuous Drain (Id) @ 25°C :

30A Ta 150A Tc

Input Capacitance (Ciss) (Max) @ Vds :

5040pF @ 10V

Number of Elements :

1

Published :

2006

Lead Free :

Lead Free

Mounting Type :

Surface Mount

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Current Rating :

30A

Drain to Source Resistance :

3mOhm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

5.05mm

Fall Time (Typ) :

9.3 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

DIRECTFET™ MX

Input Capacitance :

5.04nF

Length :

6.35mm

Operating Temperature :

-40°C~150°C TJ

Min Operating Temperature :

-40°C

Threshold Voltage :

1.55V

Number of Pins :

5

Termination :

SMD/SMT

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 4.5V

RoHS Status :

RoHS Compliant

Dual Supply Voltage :

20V

Rds On Max :

2.2 MΩ

Rise Time :

71ns