IRF6619TR1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-40°C

Turn-Off Delay Time :

25 ns

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Voltage - Rated DC :

20V

Rds On (Max) @ Id, Vgs :

2.2mOhm @ 30A, 10V

Drain to Source Breakdown Voltage :

20V

Drain to Source Resistance :

1.65Ohm

Reverse Recovery Time :

29 ns

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 4.5V

Rds On Max :

2.2 MΩ

Number of Elements :

1

FET Type :

N-Channel

Number of Pins :

7

Current Rating :

30A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Continuous Drain Current (ID) :

24A

Series :

HEXFET®

Rise Time :

71ns

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Dual Supply Voltage :

20V

Power Dissipation :

2.8W

Package / Case :

DirectFET™ Isometric MX

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Threshold Voltage :

2.45V

Input Capacitance :

5.04nF

Current - Continuous Drain (Id) @ 25°C :

30A Ta 150A Tc

Drain to Source Voltage (Vdss) :

20V

Operating Temperature :

-40°C~150°C TJ

Mounting Type :

Surface Mount

Fall Time (Typ) :

9.3 ns

Termination :

SMD/SMT

Supplier Device Package :

DIRECTFET™ MX

Power Dissipation-Max :

2.8W Ta 89W Tc

RoHS Status :

Non-RoHS Compliant

Nominal Vgs :

2.45 V

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

5040pF @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2005

Mount :

Surface Mount