IRF6619

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Power Dissipation-Max :

2.8W Ta 89W Tc

Vgs (Max) :

±20V

Case Connection :

DRAIN

Continuous Drain Current (ID) :

24A

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

5040pF @ 10V

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 30A, 10V

Operating Temperature :

-40°C~150°C TJ

Avalanche Energy Rating (Eas) :

240 mJ

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0022Ohm

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Current Rating :

30A

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Breakdown Voltage :

20V

FET Type :

N-Channel

Rise Time :

71ns

RoHS Status :

Non-RoHS Compliant

Power Dissipation :

2.8W

Voltage - Rated DC :

20V

Lead Free :

Lead Free

Number of Pins :

7

Package / Case :

DirectFET™ Isometric MX

JESD-30 Code :

R-XBCC-N3

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

BOTTOM

Terminal Form :

NO LEAD

Mount :

Surface Mount

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

240A

Transistor Application :

SWITCHING

Turn-Off Delay Time :

25 ns

Published :

2005

Current - Continuous Drain (Id) @ 25°C :

30A Ta 150A Tc

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 4.5V

Fall Time (Typ) :

9.3 ns

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified