IRF6618TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Length :

6.35mm

JESD-609 Code :

e1

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Resistance :

2.2MOhm

Fall Time (Typ) :

8.1 ns

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Package / Case :

DirectFET™ Isometric MT

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

5640pF @ 15V

Radiation Hardening :

No

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Position :

BOTTOM

Current Rating :

30A

Turn On Delay Time :

21 ns

Power Dissipation :

89W

JESD-30 Code :

R-XBCC-N3

Number of Elements :

1

Factory Lead Time :

12 Weeks

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

240A

Rise Time :

71ns

Mounting Type :

Surface Mount

Number of Pins :

5

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 4.5V

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

29A

Series :

HEXFET®

Turn-Off Delay Time :

27 ns

Operating Temperature :

-40°C~150°C TJ

Width :

5.0546mm

Height :

508μm

Power Dissipation-Max :

2.8W Ta 89W Tc

Published :

2007

Continuous Drain Current (ID) :

170mA

Case Connection :

DRAIN

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 30A, 10V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Voltage - Rated DC :

30V

Vgs(th) (Max) @ Id :

2.35V @ 250μA

Threshold Voltage :

1.64V

Current - Continuous Drain (Id) @ 25°C :

30A Ta 170A Tc