IRF6618TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

240A

Packaging :

Tape and Reel (TR)

Package / Case :

DirectFET™ Isometric MT

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

5640pF @ 15V

FET Type :

N-Channel

Published :

2007

Vgs(th) (Max) @ Id :

2.35V @ 250μA

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 30A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Number of Pins :

5

Case Connection :

DRAIN

Number of Terminations :

3

Series :

HEXFET®

Turn-Off Delay Time :

27 ns

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-40°C~150°C TJ

Mounting Type :

Surface Mount

Number of Elements :

1

Current Rating :

30A

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Turn On Delay Time :

21 ns

Factory Lead Time :

12 Weeks

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 4.5V

ECCN Code :

EAR99

Voltage - Rated DC :

30V

Continuous Drain Current (ID) :

170mA

Current - Continuous Drain (Id) @ 25°C :

30A Ta 170A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

BOTTOM

Power Dissipation-Max :

2.8W Ta 89W Tc

Drain Current-Max (Abs) (ID) :

29A

Power Dissipation :

89W

Peak Reflow Temperature (Cel) :

260

Height :

508μm

Fall Time (Typ) :

8.1 ns

Mount :

Surface Mount

Length :

6.35mm

Gate to Source Voltage (Vgs) :

20V

Resistance :

2.2MOhm

Width :

5.0546mm

Rise Time :

71ns

Threshold Voltage :

1.64V

JESD-30 Code :

R-XBCC-N3

JESD-609 Code :

e1

Vgs (Max) :

±20V